- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Rise Time :
- Peak Wavelength :
7 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Product | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Rise Time | Fall Time | Peak Wavelength | Dark Current | Maximum On-State Collector Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
11,260
재고
|
OSRAM Opto Semiconductors | Phototransistors PHOTODIODE | Phototransistors | Through Hole | TO-18 | - 40 C | + 125 C | 200 mW | 35 V | 9 us | 9 us | 830 nm | 50 nA | 100 mA | |||
|
견적을 받아 |
1,889
재고
|
OSRAM Opto Semiconductors | Phototransistors PHOTODIODE | TO-18 | - 40 C | + 80 C | 150 mW | 7 us, 9 us | 7 us, 9 us | 850 nm | 50 nA | 100 mA | ||||||
|
견적을 받아 |
1,706
재고
|
OSRAM Opto Semiconductors | Phototransistors PHOTODIODE | Phototransistors | Through Hole | TO-18 | - 40 C | + 125 C | 200 mW | 35 V | 7 us, 9 us | 7 us, 9 us | 830 nm | 50 nA | 100 mA | |||
|
견적을 받아 |
1,923
재고
|
OSRAM Opto Semiconductors | Phototransistors PHOTODIODE | TO-18 | - 40 C | + 80 C | 150 mW | 850 nm | 50 nA | 100 mA | ||||||||
|
견적을 받아 |
888
재고
|
OSRAM Opto Semiconductors | Phototransistors PHOTODIODE | TO-18 | - 40 C | + 125 C | 200 mW | 830 nm | 50 nA | 100 mA | ||||||||
|
전망 | Sharp Microelectronics | Phototransistors PT550 w/ visible lite cut off | TO-18 | - 25 C | + 125 C | 150 mW | 35 V | 350 us | 300 us | 800 nm | 1 uA | 100 mA | ||||||
|
전망 | Sharp Microelectronics | Phototransistors Darlington Output Ver PT501 3-142mA | TO-18 | - 25 C | + 125 C | 150 mW | 35 V | 350 us | 300 us | 800 nm | 1 uA | 100 mA |