- Series :
- Maximum DC Collector Current :
- Gain Bandwidth Product fT :
5 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
3,541
재고
|
Central Semiconductor | Bipolar Transistors - BJT NPN Fast SW SS | Through Hole | TO-18-3 | + 200 C | 2N2369 | Single | NPN | 15 V | 40 V | 4.5 V | 500 mV | 200 mA | 500 MHz | ||
|
|
견적을 받아 |
1,758
재고
|
Central Semiconductor | Bipolar Transistors - BJT . . | Through Hole | TO-18-3 | + 200 C | 2N4029 | Single | PNP | 80 V | 80 V | 5 V | 500 mV | 150 MHz | |||
|
|
|
견적을 받아 |
41
재고
|
Microsemi | Bipolar Transistors - BJT NPN Transistor | Through Hole | TO-18-3 | + 200 C | Single | NPN | 80 V | 140 V | 7 V | 500 mV | 1 A | ||||
|
|
|
견적을 받아 |
128
재고
|
Microsemi | Bipolar Transistors - BJT NPN Transistor | Through Hole | TO-18-3 | + 200 C | Single | NPN | 80 V | 140 V | 7 V | 500 mV | 1 A | ||||
|
|
|
견적을 받아 |
94
재고
|
Microsemi | Bipolar Transistors - BJT Small-Signal BJT | Through Hole | TO-18-3 | + 200 C | Single | PNP | 80 V | 80 V | 5 V | 500 mV | 150 MHz |
