- Series :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | DC Collector/Base Gain hfe Min | Continuous Collector Current | |
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전망 | Toshiba | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms | SMD/SMT | VESM-3 | + 150 C | RN1113 | Reel | 150 mW | Single | NPN | 50 V | 700 | 100 mA | |||
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전망 | Toshiba | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10Kohms | SMD/SMT | VESM-3 | + 150 C | RN1111 | Reel | 150 mW | Single | NPN | 50 V | 700 | 100 mA | |||
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전망 | Toshiba | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22Kohms | SMD/SMT | VESM-3 | + 150 C | RN1112 | Reel | 150 mW | Single | NPN | 50 V | 700 | 100 mA | |||
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전망 | Toshiba | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms | SMD/SMT | + 150 C | RN1110 | Reel | 150 mW | Single | NPN | 50 V | 700 | 100 mA |
