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| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | GeneSiC Semiconductor | JFET SiC Super Junc Trans 1200V-Rds 550mO-3A | Through Hole | TO-247AB-3 | + 175 C | GA03 | Tube | 5 W | Single | N-Channel | 1200 V | 3 A | 470 mOhms |
