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1 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Mounting Style | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
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견적을 받아 |
99
재고
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USCi | JFET 1200V/80mOhm SiC JFET, N-ON, TO-247 | Through Hole | TO-247-3 | + 175 C | 136 W | Single | N-Channel | 1200 V | 230 mOhms | +/- 20 V | 21 A |
