- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
2,500
재고
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Central Semiconductor | MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.8 A | 34 mOhms | 6.3 nC | Enhancement | ||
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전망 | Central Semiconductor | MOSFET SMD Small Sig Mosfet Dual P-Ch Enh Mode | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 5.3 A | 83 mOhms | 7 nC | Enhancement | |||
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전망 | Central Semiconductor | MOSFET SMD Small Sig Mosfet P-Channel Enh Mode | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 83 mOhms | 7 nC | Enhancement |
