- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
견적을 받아 |
182
재고
|
Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-23 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.6 A | 23 mOhms | 15.4 nC | |||||
|
|
견적을 받아 |
14,000
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerD3333-8,2K | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 23 mOhms | 10.5 nC | Enhancement | ||||
|
|
|
전망 | Diodes Incorporated | MOSFET 30V N-Ch ENH Mode PowerDI 7.5A - 6.3A | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 23 mOhms | Enhancement | ||||||
|
|
전망 | Diodes Incorporated | MOSFET 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 9.5 A | 23 mOhms | - 0.8 V | 48.3 nC | Enhancement | PowerDI |
