- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
2,569
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 43 nC | Enhancement | DIOFET | |||
|
|
|
견적을 받아 |
1,500
재고
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.7 A | 9.5 mOhms | 43 nC | |||||
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|
|
견적을 받아 |
3,903
재고
|
Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 1 V | 43 nC | Enhancement |
