- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
760
재고
|
Infineon Technologies | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.3 A | 300 mOhms | 23.3 nC | Enhancement | ||
|
|
견적을 받아 |
535
재고
|
Infineon Technologies | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.3 A | 300 mOhms | 23.3 nC | Enhancement | ||
|
|
견적을 받아 |
746
재고
|
Infineon Technologies | MOSFET Automotive Logic Le mOhm, 13 nC Qg, IPAK | Through Hole | TO-251-3 | Tube | Si | N-Channel | 250 V | 9.3 A | 275 mOhms | 13 nC |
