- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
11 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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견적을 받아 |
2,342
재고
|
Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | |||||||
|
견적을 받아 |
2,020
재고
|
Infineon Technologies | MOSFET MOSFT 55V 41A 17.5mOhm 42nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 41 A | 23 mOhms | 42 nC | |||||||
|
견적을 받아 |
513
재고
|
Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | ||||
|
견적을 받아 |
340
재고
|
Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 4 V | 130 nC | ||||
|
견적을 받아 |
1,230
재고
|
Infineon Technologies | MOSFET MOSFT 60V 48A 23mOhm 40nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | |||||||
|
견적을 받아 |
296
재고
|
Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | |||||||
|
견적을 받아 |
558
재고
|
Infineon Technologies | MOSFET MOSFT 60V 48A 23mOhm 40nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | |||||||
|
견적을 받아 |
175
재고
|
Infineon Technologies | MOSFET MOSFT 200V 98A 23mOhm 160nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 98 A | 23 mOhms | 160 nC | Enhancement | ||||
|
견적을 받아 |
70
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | ||||
|
견적을 받아 |
1,160
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | ||||
|
견적을 받아 |
550
재고
|
Infineon Technologies | MOSFET N-Ch 200V 30A D2PAK-2 | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 30 A | 23 mOhms | Enhancement |