- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- 선택한 필터 :
6 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
전망 | Renesas Electronics | MOSFET N-Channel MOSFET - LDPAK(S)-(1) | LDPAK-3 | Tray | Si | ||||||||||||||
|
전망 | Microchip Technology | MOSFET NCh ENHANCEMENT MODE VERTICAL DMOS | 20 V | SMD/SMT | QFN-14 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 290 V | 410 mA | 6 Ohms | Enhancement | ||||
|
전망 | Optek / TT Electronics | MOSFET N-Channel Enhncmnt Mode Trans | Tray | 1 Channel | Si | N-Channel | Enhancement | ||||||||||||
|
전망 | Toshiba | MOSFET MOSFET DTMOS-II N-CH 600V, 12A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 600 V | 12 A | 400 mOhms | Enhancement | ||||
|
전망 | Toshiba | MOSFET MOSFET DTMOS-II N-CH 600V, 20A | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 600 V | 20 A | 190 mOhms | Enhancement | ||||
|
전망 | Toshiba | MOSFET MOSFET N-CH 500V, 15A | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 500 V | 15 A | 300 mOhms | Enhancement |