2 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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견적을 받아 |
19,594
재고
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 16 V, 16 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A, 50 A | 2.4 mOhms, 700 uOhms | 1.2 V, 1.2 V | 8.4 nC, 29 nC | Enhancement | |||
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견적을 받아 |
790
재고
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Infineon Technologies | MOSFET LV POWER MOS | 16 V, 16 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A, 50 A | 2.4 mOhms, 700 uOhms | 1.2 V, 1.2 V | 8.4 nC, 29 nC | Enhancement |