- Mounting Style :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (1)
- 1.07 Ohms (1)
- 1.1 Ohms (1)
- 1.2 Ohms (6)
- 10.6 mOhms (1)
- 103 mOhms (1)
- 11 mOhms (1)
- 13 mOhms (2)
- 14 mOhms (1)
- 17 mOhms (2)
- 17.3 mOhms (1)
- 18 mOhms (2)
- 21.5 mOhms, 13 mOhms (1)
- 22 mOhms (2)
- 23 mOhms (3)
- 240 mOhms (1)
- 250 mOhms (1)
- 27 mOhms (1)
- 3.6 Ohms (1)
- 30 mOhms (1)
- 35 mOhms (1)
- 395 mOhms (1)
- 40 mOhms (2)
- 550 mOhms (2)
- 560 mOhms (6)
- 600 mOhms (1)
- 65 mOhms (3)
- 760 mOhms (1)
- 800 mOhms (1)
- 9 mOhms (1)
- 950 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
51 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
2,191
재고
|
STMicroelectronics | MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power... | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 550 mOhms | 2 V | 12.4 nC | Enhancement | ||||
|
견적을 받아 |
1,765
재고
|
STMicroelectronics | MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 550 mOhms | 2 V | 13.5 nC | Enhancement | ||||
|
견적을 받아 |
27,080
재고
|
Diodes Incorporated | MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 22 mOhms | Enhancement | ||||||
|
견적을 받아 |
4,031
재고
|
Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 35 mOhms | 1.8 V | 12 nC | PowerTrench | |||||
|
견적을 받아 |
4,100
재고
|
Fairchild Semiconductor | MOSFET 30V Dual N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 21.5 mOhms, 13 mOhms | 10 nC, 18 nC | Enhancement | PowerTrench SyncFET | ||||
|
견적을 받아 |
5,217
재고
|
Diodes Incorporated | MOSFET N-Ch 60V 7.5A | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 40 mOhms | Enhancement | ||||||
|
견적을 받아 |
6,761
재고
|
Fairchild Semiconductor | MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 10.6 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
8,556
재고
|
Fairchild Semiconductor | MOSFET 30V DUAL N-CH. FET 18 MO SO8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 17 mOhms | Enhancement | PowerTrench SyncFET | |||||
|
견적을 받아 |
2,663
재고
|
Fairchild Semiconductor | MOSFET 100V 7.5a .22 Ohms/VGS=1V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.5 A | 23 mOhms | Enhancement | UltraFET | |||||
|
견적을 받아 |
2,688
재고
|
Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.5 A | 13 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
2,447
재고
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 7.5 A | 17.3 mOhms | 4 V | 16 nC | PowerTrench | ||||
|
견적을 받아 |
1,326
재고
|
STMicroelectronics | MOSFET N-Ch, 700V-1ohm Zener SuperMESH 7.5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.5 A | 1.2 Ohms | 3.75 V | 48 nC | Enhancement | ||||
|
견적을 받아 |
3,480
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | |||||
|
견적을 받아 |
3,860
재고
|
Fairchild Semiconductor | MOSFET SO-8 | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.5 A | 18 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
3,765
재고
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.5 A | 13 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
1,951
재고
|
STMicroelectronics | MOSFET N-Ch 60 V 0.017 Ohm 7.5 A STripFET II | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 17 mOhms | Enhancement | ||||||
|
견적을 받아 |
36
재고
|
IXYS | MOSFET 8 Amps 1500V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 7.5 A | 3.6 Ohms | 5 V | 250 nC | Enhancement | ||||
|
견적을 받아 |
1,458
재고
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 14 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
1,158
재고
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 11 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
898
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 1.2 Ohms | Enhancement | ||||||
|
견적을 받아 |
751
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | |||||
|
견적을 받아 |
802
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | |||||
|
견적을 받아 |
385
재고
|
ON Semiconductor | MOSFET 600V 0.95 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | |||||
|
견적을 받아 |
864
재고
|
Infineon Technologies | MOSFET SMALL SIGNALN-CH | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.5 A | 22 mOhms | 300 mV | 4.7 nC | Enhancement | ||||
|
견적을 받아 |
1,812
재고
|
Nexperia | MOSFET N-channel TrenchMOS standard level FET | 16 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 7.5 A | 65 mOhms | 2 V | Enhancement | |||||
|
견적을 받아 |
352
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x6-HV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.5 A | 395 mOhms | 3 V | 19.5 nC | Enhancement | ||||
|
견적을 받아 |
1,563
재고
|
Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 18 mOhms | 2 V | 11.6 nC | Enhancement | ||||
|
견적을 받아 |
31
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | |||||
|
견적을 받아 |
935
재고
|
GaN Systems | MOSFET 650V Enhancement Mode Transistor | 10 V | SMD/SMT | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 650 V | 7.5 A | 560 mOhms | 1.6 V | 1.7 nC | Enhancement | |||||
|
견적을 받아 |
227
재고
|
Toshiba | MOSFET N-Ch MOS 7.5A 600V 45W 1050pF 1 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 1 Ohms |