- Rds On - Drain-Source Resistance :
6 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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견적을 받아 |
1,833
재고
|
Microchip Technology | MOSFET 250V 7Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 250 V | 215 mA | 7 Ohms | Enhancement | |||
|
견적을 받아 |
1,980
재고
|
Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 215 mA | 8 Ohms | Enhancement | |||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 250 V | 215 mA | 8 Ohms | Enhancement | |||||||
|
전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 215 mA | 8 Ohms | Enhancement | ||||
|
전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 215 mA | 8 Ohms | Enhancement | ||||
|
전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 215 mA | 8 Ohms | Enhancement |