- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Channel Mode :
7 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
26,510
재고
|
Nexperia | MOSFET 60V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3.2 Ohms | 1.1 V | 1 nC | Enhancement | |||
|
견적을 받아 |
3,640
재고
|
Microchip Technology | MOSFET Lateral N-Ch MOSFET Depletion-Mode | 600 mV | SMD/SMT | SOT-23-5 | + 125 C | Reel | 1 Channel | Si | N-Channel | 9 V | 330 mA | 1.4 Ohms | Depletion | ||||||
|
전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | |||||||||
|
전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | |||||||||
|
전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | |||||||||
|
전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | |||||||||
|
전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement |