6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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견적을 받아 |
2,836
재고
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Microchip Technology | MOSFET 60V 3Ohm | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | ||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | ||||||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | ||||||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | ||||||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement | ||||||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3 Ohms | Enhancement |
