- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
14 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
1,320
재고
|
Fairchild Semiconductor | MOSFET 100V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.4 A | 19 mOhms | Enhancement | UltraFET | |||||
|
견적을 받아 |
4,572
재고
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | ||||||
|
견적을 받아 |
4,152
재고
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | ||||||
|
견적을 받아 |
2,386
재고
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET 2.5V Specified | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.4 A | 15 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
1,346
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 3.5 V | 20 nC | SuperFET II | ||||
|
견적을 받아 |
1,148
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | Through Hole | TO-220FP-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 2.5 V to 3.5 V | 20 nC | SuperFET II | ||||
|
견적을 받아 |
988
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | ||||||
|
견적을 받아 |
798
재고
|
Fairchild Semiconductor | MOSFET 600V 7.4A 1Ohm N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | QFET | |||||
|
견적을 받아 |
2,490
재고
|
Fairchild Semiconductor | MOSFET Trans MOS N-Ch 250V 7.4A 3-Pin 2+Tab | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | QFET | |||||
|
견적을 받아 |
4,056
재고
|
ON Semiconductor | MOSFET NFETDPAK40V100A3.7M OHM | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7.4 A | 25 mOhms | |||||||
|
견적을 받아 |
761
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | ||||||
|
견적을 받아 |
470
재고
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-262-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.4 A | 860 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
|
전망 | Fairchild Semiconductor | MOSFET 250V N-Channel QFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | |||||||||
|
전망 | Infineon Technologies | MOSFET N-Ch 100V 7.4A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.4 A | 20.5 mOhms | Enhancement | OptiMOS |