- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
18 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
4,674
재고
|
Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 11 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
292
재고
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 77 mOhm, FRFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 54 A | 68 mOhms | 5 V | 126 nC | SuperFET II | ||||
|
견적을 받아 |
464
재고
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 54 A | 184 mOhms | 3 V | 126 nC | Enhancement | SuperFET II | |||
|
견적을 받아 |
4,788
재고
|
Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 54 A | 20 mOhms | Enhancement | ||||||
|
견적을 받아 |
1,549
재고
|
Fairchild Semiconductor | MOSFET NCH PWR TRNCH MOSFET 30V 54A 11.6 OHMS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 54 A | 11.6 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
3,131
재고
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 54 A | 4.8 mOhms | 17 nC | StrongIRFET | |||||||
|
견적을 받아 |
2,258
재고
|
STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 7 mOhms | 2 V | 44 nC | Enhancement | ||||
|
견적을 받아 |
1,208
재고
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 54 A | 11.6 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
565
재고
|
ON Semiconductor | MOSFET NFET DPAK 60V 54A 17MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 60 V | 54 A | 17 mOhms | |||||||||||
|
견적을 받아 |
1,822
재고
|
Microchip Technology | MOSFET N-channel 13.0mohm MOSFET | SMD/SMT | PDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 54 A | 13.8 mOhms | 1.35 V | 5.5 nC | ||||||
|
전망 | IXYS | MOSFET 54 Amps 300V 72 Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 300 V | 54 A | 72 Ohms | ||||||||||||
|
전망 | IXYS | MOSFET 54 Amps 300V 72 Rds | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 300 V | 54 A | 72 Ohms | ||||||||||||
|
전망 | IXYS | MOSFET 54 Amps 300V 72 Rds | Through Hole | TO-3P-3 | Tube | Si | N-Channel | 300 V | 54 A | 72 Ohms | ||||||||||||
|
전망 | IXYS | MOSFET 54 Amps 300V 72 Rds | Through Hole | TO-220-3 | Tube | Si | N-Channel | 300 V | 54 A | 72 Ohms | ||||||||||||
|
전망 | Nexperia | MOSFET RAIL PWR-MOS | 10 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 54 A | 18 mOhms | Enhancement | |||||||
|
전망 | ON Semiconductor | MOSFET NFET DPAK 30V 54A 10MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 30 V | 54 A | 10 mOhms | ||||||||||||
|
전망 | Nexperia | MOSFET TAPE13 PWR-MOS | 10 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 54 A | 18 mOhms | Enhancement | |||||||
|
견적을 받아 |
3,976
재고
|
Nexperia | MOSFET RAIL PWR-MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 54 A | 20 mOhms | Enhancement |