- Mounting Style :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
5,364
재고
|
Diodes Incorporated | MOSFET N Channel | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.1 A | 110 mOhms | Enhancement | ||||
|
|
견적을 받아 |
4,528
재고
|
ON Semiconductor | MOSFET 20V 4.1A Dual N-Channel | 12 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 4.1 A | 80 mOhms | Enhancement | ||||
|
|
견적을 받아 |
4,740
재고
|
ON Semiconductor | MOSFET NFET DPAK 600V 4A 1.8R | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 4.1 A | 1.8 Ohms | 4.5 V | 19 nC | ||||||
|
|
견적을 받아 |
14,980
재고
|
Nexperia | MOSFET 80V single N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 4.1 A | 80 mOhms | 1.3 V | 14.9 nC | Enhancement | ||
|
|
|
견적을 받아 |
12,000
재고
|
Infineon Technologies | MOSFET MOSFT 20V 4.1A 46mOhm 2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 4.1 A | 46 mOhms | 3.5 nC | ||||||
|
|
견적을 받아 |
1,725
재고
|
ON Semiconductor | MOSFET NFET IPAK 600V 4A 1.8R | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 4.1 A | 1.8 Ohms | 4.5 V | 19 nC |
