- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,992
재고
|
Infineon / IR | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||
|
|
견적을 받아 |
116
재고
|
Infineon / IR | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||
|
|
견적을 받아 |
280
재고
|
Infineon / IR | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||
|
|
|
견적을 받아 |
800
재고
|
Infineon / IR | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 150 nC | CoolIRFet | |||||||
|
|
견적을 받아 |
55
재고
|
Infineon / IR | MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, D2-Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2.2 V to 3.9 V | 150 nC | Enhancement | StrongIRFET | ||
|
|
|
전망 | Infineon / IR | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.4 mOhms | 150 nC | CoolIRFet |
