- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
9 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
4,549
재고
|
ON Semiconductor | MOSFET NFET SO8FL 30V 160A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 106 A | 2.1 mOhms | 1.7 V | 47.9 nC | |||||
|
견적을 받아 |
311
재고
|
Infineon Technologies | MOSFET MOSFT 75V 105A 7mOhm 150nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 220 nC | |||||||
|
견적을 받아 |
47
재고
|
Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 106 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | ||||||
|
견적을 받아 |
768
재고
|
Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 150 nC | ||||||||
|
견적을 받아 |
800
재고
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 150 nC | Enhancement | ||||
|
전망 | IXYS | MOSFET 200V 106A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 106 A | 20 mOhms | Enhancement | HyperFET | ||||||
|
전망 | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 150 nC | |||||||||
|
견적을 받아 |
21
재고
|
Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 106 A | 35 mOhms | 3 V | 308 nC | Enhancement | |||||
|
전망 | Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 150 nC |