- Package / Case :
- Rds On - Drain-Source Resistance :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,740
재고
|
Infineon / IR | MOSFET 24V 1 N-CH HEXFET 1mOhm 180nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 429 A | 800 Ohms | 4 V | 180 nC | Enhancement | ||
|
|
견적을 받아 |
56
재고
|
Infineon Technologies | MOSFET MOSFT 24V 340A 1.65mOhm 160nC Qg | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 24 V | 429 A | 800 uOhms | 180 nC |
