- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
16 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
22,306
재고
|
Fairchild Semiconductor | MOSFET P-Channel FET Enhancement Mode | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 180 mA | 5 Ohms | Enhancement | ||||
|
|
견적을 받아 |
32,712
재고
|
Nexperia | MOSFET P-CH -50 V -180 mA | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 7.5 Ohms | 0.35 nC | |||||||
|
|
|
견적을 받아 |
4,587
재고
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 310mW -50Vdss 30Vgss | - 5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 10 Ohms | - 2 V | Enhancement | |||
|
|
견적을 받아 |
2,634
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 18 mOhms | - 2.1 V | Enhancement | |||
|
|
견적을 받아 |
978
재고
|
Microchip Technology | MOSFET 350V 15Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | ||||
|
|
|
견적을 받아 |
845
재고
|
Microchip Technology | MOSFET 400V 15Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 400 V | - 180 mA | 15 Ohms | Enhancement | ||||
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|
|
전망 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 310mW -50Vdss 30Vgss | - 5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 10 Ohms | - 2 V | Enhancement | ||||
|
|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | ||||||||
|
|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | |||||
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|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | P-Channel | - 400 V | - 180 mA | 15 Ohms | Enhancement | ||||||||
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|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 180 mA | 15 Ohms | Enhancement | |||||
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|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 180 mA | 15 Ohms | Enhancement | |||||
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|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | |||||
|
|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 180 mA | 15 Ohms | Enhancement | |||||
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|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | |||||
|
|
|
전망 | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement |
