- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
734
재고
|
Infineon / IR | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | ||
|
|
견적을 받아 |
800
재고
|
Infineon Technologies | MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 426 A | 1.2 mOhms | 3.9 V | 300 nC | StrongIRFET |
