- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
4,644
재고
|
Fairchild Semiconductor | MOSFET 60V Dual N-Channel Power Trench MOSFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 8.2 A | 17 mOhms | 7.9 nC, 17 nC | Enhancement | PowerTrench | ||||
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견적을 받아 |
4,193
재고
|
Infineon Technologies | MOSFET 30V 8.2A 19mOhm 4.8 Qg | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.2 A | 29 mOhms | |||||||
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견적을 받아 |
4,000
재고
|
Micro Commercial Components (MCC) | MOSFET N-Channel MOSFET, SOP-8 package | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8.2 A | 22 mOhms | 1 V | 58 nC | Enhancement |
