2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
1,542
재고
|
Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | ||
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견적을 받아 |
11,908
재고
|
Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement |
