- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
3,328
재고
|
Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 160 mA | 14 Ohms | Enhancement | ||||
|
|
견적을 받아 |
262
재고
|
Nexperia | MOSFET P-CH -50 V -160 mA | SMD/SMT | SOT-363-6 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 160 mA | 7.5 Ohms | 0.35 nC | |||||||
|
|
견적을 받아 |
2,531
재고
|
Diodes Incorporated | MOSFET PMOS-Dual | 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 50 V | - 160 mA | 8 Ohms | Enhancement | ||||
|
|
|
견적을 받아 |
5,398
재고
|
Diodes Incorporated | MOSFET P-Ch ENH -50V 6Ohm FET -4V Vgs -200mA | 8 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 50 V | - 160 mA | 6 Ohms | - 1.2 V | 0.58 nC | Enhancement | ||
|
|
견적을 받아 |
19,605
재고
|
Microchip Technology | MOSFET 40V 6Ohm | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 160 mA | 6 Ohms | Enhancement | ||||
|
|
견적을 받아 |
8,271
재고
|
Microchip Technology | MOSFET 500V 30Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 160 mA | 30 Ohms | Enhancement |
