- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
3,465
재고
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.4 A | 16.5 mOhms | 1 V | 10.8 nC | Enhancement | ||
|
|
견적을 받아 |
2,472
재고
|
Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.4 A | 9 mOhms | 1 V | 45.7 nC | Enhancement | ||
|
|
|
견적을 받아 |
2,982
재고
|
Nexperia | MOSFET PMPB20EN/SOT1220/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.4 A | 16.5 mOhms | 1 V | 10.8 nC | Enhancement |
