- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
2,340
재고
|
ON Semiconductor | MOSFET NFET XLLGA3 20V 230MA | 8 V | SMD/SMT | XLLGA-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 224 mA | 1.4 Ohms | 1 V | 0.7 nC | Enhancement | ||
|
|
|
견적을 받아 |
1,210
재고
|
ON Semiconductor | MOSFET NFET XLLGA3 20V 230MA 1.4 | 8 V | SMD/SMT | XLLGA-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 224 mA | 650 mOhms | 400 mV | 700 pC | Enhancement |
