2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,560
재고
|
Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 60 V | - 7.7 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,153
재고
|
Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.7 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement |
