- Package / Case :
- Rds On - Drain-Source Resistance :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
6,837
재고
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Fairchild Semiconductor | MOSFET 60V 50A 4.1ohm NCh PowerTrench MOSFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 21.5 A | 5 mOhms | PowerTrench | ||||||
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견적을 받아 |
268
재고
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-8x8-HV-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21.5 A | 135 mOhms | 3 V | 4.7 nC | Enhancement | |||
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견적을 받아 |
600
재고
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Nexperia | MOSFET Trans MOSFET N-CH 200V 21.5A 5-Pin | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 21.5 A | 102 mOhms | Enhancement |
