- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
3 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
25,410
재고
|
Fairchild Semiconductor | MOSFET 20V Single P Channel PowerTrench Mosfet | +/- 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.8 A | 45 mOhms | - 1.5 V | 30 nC | PowerTrench | ||||
|
견적을 받아 |
7,959
재고
|
ON Semiconductor | MOSFET 20V 6A P-Channel | 12 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 7.8 A | 27 mOhms | Enhancement | ||||||
|
견적을 받아 |
2,835
재고
|
Fairchild Semiconductor | MOSFET -20V Single P-Chan PowerTrench | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.8 A | 30 mOhms | Enhancement | PowerTrench |