2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
2,360
재고
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Infineon Technologies | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.8 A | 8 mOhms | Enhancement | OptiMOS | |||
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견적을 받아 |
3,073
재고
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Infineon Technologies | MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.8 A | 8 mOhms | - 61 nC | Enhancement | OptiMOS |
