- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
37 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
7,833
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | ||||||||
|
견적을 받아 |
671
재고
|
IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
|
견적을 받아 |
1,082
재고
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.1mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
|
견적을 받아 |
3,130
재고
|
Infineon / IR | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
|
견적을 받아 |
1,372
재고
|
Infineon Technologies | MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC | 20 V | SMD/SMT | DirectFET-MT | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.4 mOhms | 46 nC | ||||||||
|
견적을 받아 |
292
재고
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 170 A | 5.6 mOhms | Enhancement | QFET | |||||
|
견적을 받아 |
678
재고
|
Infineon / IR | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | ||||||||
|
견적을 받아 |
621
재고
|
IXYS | MOSFET 170 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
|
견적을 받아 |
294
재고
|
Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | ||||||
|
견적을 받아 |
474
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
|
견적을 받아 |
82
재고
|
IXYS | MOSFET PolarHT HiperFET 100v, 170A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
|
견적을 받아 |
176
재고
|
Infineon Technologies | MOSFET MOSFT 40V 170A 3.6mOhm 130nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 170 A | 3.6 mOhms | 130 nC | ||||||||
|
견적을 받아 |
198
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
|
견적을 받아 |
250
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
|
견적을 받아 |
165
재고
|
Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 9 mOhms | 180 nC | Enhancement | ||||||
|
견적을 받아 |
240
재고
|
Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | ||||||
|
견적을 받아 |
50
재고
|
IXYS | MOSFET 170A 200V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 170 A | 11 mOhms | 5 V | 265 nC | Enhancement | GigaMOS | |||
|
견적을 받아 |
25
재고
|
IXYS | MOSFET Polar Power MOSFET HiPerFET | 20 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 170 A | 18 mOhms | 4.5 V | 258 nC | Enhancement | Polar, HiPerFET | ||||
|
견적을 받아 |
7
재고
|
IXYS | MOSFET 170 Amps 200V 0.014 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 170 A | 14 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
|
견적을 받아 |
4,800
재고
|
Infineon / IR | MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC | 16 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1.7 mOhms | 29 nC | Directfet | |||||||
|
견적을 받아 |
30
재고
|
IXYS | MOSFET 170 Amps 100V 0.009 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
|
전망 | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.2 mOhms | 28 nC | Directfet | ||||||||
|
전망 | IXYS | MOSFET 170 Amps 75V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | Enhancement | |||||||
|
견적을 받아 |
800
재고
|
Infineon Technologies | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
|
견적을 받아 |
40
재고
|
IXYS | MOSFET Polar HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 170 A | 14 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | ||||
|
전망 | IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | |||||||
|
전망 | IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | |||||||
|
전망 | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 2.4 mOhms | 36 nC | |||||||||
|
전망 | IXYS | MOSFET 170A 200V | Through Hole | TO-247-3 | Tube | Si | N-Channel | 200 V | 170 A | |||||||||||||
|
전망 | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1 MOhms | 1.2 V | 82 nC | Enhancement |