- Mounting Style :
- Package / Case :
-
- H2PAK-2 (1)
- PowerFLAT-5x6-VHV-8 (1)
- PowerSO-10RF-2 (1)
- SO-8 (2)
- SOT-23-3 (8)
- SOT-25T-5 (1)
- SOT-26-6 (1)
- SOT-323T-3 (2)
- SOT-346T-3 (3)
- SOT-363-6 (1)
- SOT-89-3 (1)
- SSOT-3 (1)
- SSOT-6 (1)
- TO-220-3 (8)
- TO-220FP-3 (3)
- TO-247-3 (2)
- TO-251-3 (5)
- TO-252-3 (6)
- TO-3P-3 (1)
- TO-3PF-3 (2)
- TSM-3 (1)
- TSOP-6 (1)
- TSST-8 (2)
- X1-DFN1616-6 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 1.8 Ohms (1)
- 10.5 Ohms (1)
- 105 mOhms (1)
- 107 mOhms (1)
- 120 mOhms (3)
- 150 mOhms (1)
- 170 mOhms (2)
- 2.1 Ohms (3)
- 2.5 Ohms (2)
- 2.51 Ohms (1)
- 2.6 Ohms (1)
- 2.8 Ohms (4)
- 201 mOhms (1)
- 22 mOhms (1)
- 250 mOhms (1)
- 3 Ohms (1)
- 3.5 Ohms (1)
- 36 mOhms (1)
- 39 mOhms (1)
- 4.5 Ohms (4)
- 40 mOhms (3)
- 48 mOhms (1)
- 5.6 Ohms (1)
- 6 Ohms (3)
- 65 mOhms (1)
- 760 mOhms (1)
- 8 Ohms (2)
- 81 mOhms (1)
- 83.5 mOhms (1)
- 830 mOhms (1)
- 9 Ohms (4)
- 90 mOhms (1)
- 90 mOhms, 68 mOhms (1)
- 95 mOhms (2)
- 950 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
56 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
4,863
재고
|
Fairchild Semiconductor | MOSFET 500V N-Channel Adv QFET C-series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.5 A | 2.1 Ohms | Enhancement | |||||
|
|
견적을 받아 |
485
재고
|
STMicroelectronics | MOSFET 1500V 6Ohm 2.5A N-Channel | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 9 Ohms | Enhancement | |||||
|
|
견적을 받아 |
2,772
재고
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 26 nC | Enhancement | ||||
|
|
견적을 받아 |
3,900
재고
|
STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | ||||
|
|
|
견적을 받아 |
2,776
재고
|
STMicroelectronics | MOSFET N-Ch 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 3.5 Ohms | 3 V | 9.5 nC | Enhancement | |||
|
|
견적을 받아 |
6,040
재고
|
Fairchild Semiconductor | MOSFET SSOT-6 N-CH 30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 2.5 A | 95 mOhms | Enhancement | PowerTrench | ||||
|
|
|
견적을 받아 |
3,465
재고
|
Fairchild Semiconductor | MOSFET UNIFET2 500V | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.5 A | 2.1 Ohms | 5 V | 6.2 nC | ||||
|
|
견적을 받아 |
489
재고
|
STMicroelectronics | MOSFET N-channel 1500 V 2.5 A PowerMESH | Through Hole | TO-3PF-3 | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 9 Ohms | |||||||||
|
|
견적을 받아 |
626
재고
|
STMicroelectronics | MOSFET 1500V 6Ohm 2.5A N-Channel | 30 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 9 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
2,376
재고
|
STMicroelectronics | MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 19 nC | Enhancement | ||||
|
|
|
견적을 받아 |
2,472
재고
|
STMicroelectronics | MOSFET N-Ch 800 Volt 2.5Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 19 nC | Enhancement | ||||
|
|
|
견적을 받아 |
1,720
재고
|
STMicroelectronics | MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 4.5 V | 19 nC | Enhancement | |||
|
|
견적을 받아 |
717
재고
|
ON Semiconductor | MOSFET N-CH Power MOSFET 1500V 2.5A | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 10.5 Ohms | 34 nC | ||||||||
|
|
|
견적을 받아 |
142
재고
|
Infineon Technologies | MOSFET MOSFT 200V 2.5A 170mOhm 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 5.5 V | 26 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,748
재고
|
STMicroelectronics | MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 525 V | 2.5 A | 2.1 Ohms | 3.75 V | 11 nC | ||||||
|
|
견적을 받아 |
3,023
재고
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 150 mOhms | 1 V | 5.8 nC | Enhancement | |||
|
|
견적을 받아 |
3,743
재고
|
Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | |||
|
|
견적을 받아 |
4,915
재고
|
Diodes Incorporated | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | 20 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 3 V | 12.3 nC | Enhancement | |||
|
|
견적을 받아 |
111
재고
|
ON Semiconductor | MOSFET NCH 2.5A 1500V TO3P3L | Through Hole | TO-3P-3 | Tube | Si | N-Channel | 1500 V | 2.5 A | 8 Ohms | 34 nC | |||||||||
|
|
|
견적을 받아 |
790
재고
|
STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | ||||
|
|
|
견적을 받아 |
8,500
재고
|
Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | |||
|
|
|
견적을 받아 |
8,900
재고
|
Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,415
재고
|
ON Semiconductor | MOSFET 30V 2.5A N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.5 A | 105 mOhms | Enhancement | |||||
|
|
견적을 받아 |
229
재고
|
Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 250 mOhms | 1 V | 3.2 nC | Enhancement | |||||
|
|
|
견적을 받아 |
11
재고
|
IXYS | MOSFET High Voltage Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 2.5 A | 6 Ohms | 5 V | 44.5 nC | Enhancement | ||||
|
|
견적을 받아 |
4,328
재고
|
ROHM Semiconductor | MOSFET N-CH 30V 2.5A TSMT3 | 20 V | SMD/SMT | SOT-346T-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.5 A | 830 mOhms | Enhancement | |||||
|
|
견적을 받아 |
5,865
재고
|
ROHM Semiconductor | MOSFET N-CH 30V 1.4A TUMT3 | 12 V | SMD/SMT | SOT-323T-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.5 A | 48 mOhms | Enhancement | |||||
|
|
견적을 받아 |
3,379
재고
|
ROHM Semiconductor | MOSFET TRANS MOSFET N/PCH 30V/20V 2.5A 8PIN | 12 V, 10 V | SMD/SMT | TSST-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 20 V | 2.5 A | 90 mOhms, 68 mOhms | 1.5 V, - 1 V | 3.2 nC, 12 nC | ||||
|
|
|
견적을 받아 |
3,588
재고
|
ROHM Semiconductor | MOSFET N-CH 30V 2.5A TSMT3 | 12 V | SMD/SMT | SOT-346T-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.5 A | 950 mOhms | Enhancement | |||||
|
|
견적을 받아 |
3,182
재고
|
Toshiba | MOSFET Small Signal Mosfet | 20 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 83.5 mOhms | 1.8 V | 7 nC | Enhancement |
