- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
8 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | IXYS | MOSFET 44 Amps 300V 85 Rds | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 44 A | 85 Ohms | |||||||
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전망 | IXYS | MOSFET 44 Amps 300V 85 Rds | Through Hole | TO-220-3 | Tube | Si | N-Channel | 300 V | 44 A | 85 Ohms | ||||||||
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전망 | IXYS | MOSFET 44 Amps 300V 85 Rds | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 300 V | 44 A | 85 Ohms | ||||||||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 500 V | - 54 mA | 85 Ohms | Enhancement | |||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 54 mA | 85 Ohms | Enhancement | |||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 54 mA | 85 Ohms | Enhancement | |||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 54 mA | 85 Ohms | Enhancement | |||
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전망 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | P-Channel | - 500 V | - 54 mA | 85 Ohms | Enhancement |
