- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
20 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
4,605
재고
|
Fairchild Semiconductor | MOSFET N-CH/500V 2.6A/2.7OHM | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | Enhancement | QFET | ||||
|
|
견적을 받아 |
6,201
재고
|
Fairchild Semiconductor | MOSFET -200V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 670 mA | 2.7 Ohms | Enhancement | |||||
|
|
견적을 받아 |
1,027
재고
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 2.7 Ohms | 42 nC | Enhancement | ||||
|
|
견적을 받아 |
4,088
재고
|
ON Semiconductor | MOSFET 500V 3A HV MOSFET DPAK | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.7 Ohms | ||||||
|
|
견적을 받아 |
1,008
재고
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 2.8 A | 2.7 Ohms | Enhancement | QFET | ||||
|
|
견적을 받아 |
7,239
재고
|
Nexperia | MOSFET NX3020NAK/TO-236AB/REEL 7" Q3/ | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 200 mA | 2.7 Ohms | 1.2 V | 0.34 nC | Enhancement | ||||
|
|
견적을 받아 |
13,120
재고
|
Nexperia | MOSFET NX3020NAKW/SC-70/REEL 7" Q1/T1 | - 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | ||||
|
|
견적을 받아 |
4,612
재고
|
Nexperia | MOSFET NX3020NAKS/SC-88/REEL 7" Q1/T1 | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | Enhancement | ||||
|
|
|
견적을 받아 |
755
재고
|
Infineon Technologies | MOSFET N-Ch 800V 2A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.7 Ohms | Enhancement | CoolMOS | ||||
|
|
견적을 받아 |
960
재고
|
Infineon Technologies | MOSFET N-Ch 800V 2A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.7 Ohms | Enhancement | CoolMOS | ||||
|
|
|
견적을 받아 |
1,575
재고
|
ON Semiconductor | MOSFET 600V 3A HV MOSFET IPAK | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.7 Ohms | ||||||
|
|
견적을 받아 |
10,662
재고
|
Nexperia | MOSFET NX3020NAKV/SOT6/REEL 7" Q1/T1 | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 200 mA | 2.7 Ohms | 1.2 V | 0.34 nC | Enhancement | ||||
|
|
|
전망 | STMicroelectronics | MOSFET N-Ch, 500V-2.4ohms Zener SuperMESH 3A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.7 Ohms | Enhancement | ||||||
|
|
|
전망 | IXYS | MOSFET 24 Amps 1200V 2.7 Rds | Through Hole | TO-247-3 | Tube | Si | 1200 V | 24 A | 2.7 Ohms | ||||||||||||
|
|
|
견적을 받아 |
4,000
재고
|
Fairchild Semiconductor | MOSFET 250V 0.11OHM 25.5A MOSFET | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 670 mA | 2.7 Ohms | ||||||
|
|
|
견적을 받아 |
1,204
재고
|
Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
1,191
재고
|
Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
6
재고
|
Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
10
재고
|
Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | |||
|
|
견적을 받아 |
386
재고
|
ON Semiconductor | MOSFET NCH 10V DRIVE SERIES | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 6.5 A | 2.7 Ohms |
