- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
25 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
7,083
재고
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 31 mOhms | 18 nC | PowerTrench | ||||||
|
|
견적을 받아 |
5,028
재고
|
Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | |||
|
|
견적을 받아 |
2,980
재고
|
STMicroelectronics | MOSFET | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 32 A | 31 mOhms | 1 V | 27 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,384
재고
|
Fairchild Semiconductor | MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 31 mOhms | Enhancement | |||||
|
|
견적을 받아 |
1,376
재고
|
Fairchild Semiconductor | MOSFET 150V NCHAN PwrTrench | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 150 V | 15 A | 31 mOhms | PowerTrench | |||||||
|
|
견적을 받아 |
3,399
재고
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 4 V | 29 nC | Enhancement | |||
|
|
견적을 받아 |
4,068
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7 A | 31 mOhms | 18.6 nC | Enhancement | ||||
|
|
견적을 받아 |
2,570
재고
|
Infineon Technologies | MOSFET 20V 1 P-CH HEXFET 31mOhms 12nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 31 mOhms | 12 nC | |||||||
|
|
견적을 받아 |
2,590
재고
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement | |||
|
|
견적을 받아 |
2,818
재고
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 31 mOhms | 1 V | 6.3 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,873
재고
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement | |||
|
|
견적을 받아 |
805
재고
|
Nexperia | MOSFET N-channel TrenchMOS logic level FET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 31 mOhms | 1.7 V | 22.8 nC | Enhancement | |||
|
|
견적을 받아 |
560
재고
|
Fairchild Semiconductor | MOSFET -20V P-Channel PowerTrench | 8 V | SMD/SMT | UMLP-6 | Reel | Si | P-Channel | - 20 V | - 5 A | 31 mOhms | - 0.5 V | 16 nC | PowerTrench | ||||||
|
|
|
견적을 받아 |
4,939
재고
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 31 mOhms | 23 nC | PowerTrench | ||||||
|
|
견적을 받아 |
8,212
재고
|
ROHM Semiconductor | MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 3.5A | 10 V | SMD/SMT | SOT-363T-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 31 mOhms | 1 V | 5.7 nC | Enhancement | |||
|
|
견적을 받아 |
656
재고
|
ROHM Semiconductor | MOSFET DRVE PCH MOSFET W/4V | 20 V | SMD/SMT | TSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 31 mOhms | 4 V | 120 nC | Enhancement | |||
|
|
견적을 받아 |
5,088
재고
|
STMicroelectronics | MOSFET N-Ch 20V 0.025 Ohm 5 A STripFET(TM) V | 8 V | SMD/SMT | SOT-23-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5 A | 31 mOhms | 0.7 V | 6 nC | Enhancement | STripFET | ||
|
|
견적을 받아 |
2,500
재고
|
ROHM Semiconductor | MOSFET MOSFET; 30V 6.5A N CHANNEL | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6.5 A | 31 mOhms | 11 nC | |||||
|
|
|
견적을 받아 |
1,634
재고
|
ROHM Semiconductor | MOSFET Pch+Pch -30V -7A MOSFET | SMD/SMT | SOP-8 | + 150 C | Reel | Si | P-Channel | - 30 V | - 7 A | 31 mOhms | |||||||||
|
|
|
견적을 받아 |
672
재고
|
ROHM Semiconductor | MOSFET Nch 60V 6.5A MOSFET | SMD/SMT | SOP-8 | + 150 C | Reel | Si | N-Channel | 60 V | 6.5 A | 31 mOhms | |||||||||
|
|
견적을 받아 |
7,976
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS | + /- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 31 mOhms | - 0.55 V | 15.8 nC | Enhancement | |||
|
|
견적을 받아 |
6,000
재고
|
Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 31 mOhms | - 1 V | 10 nC | Enhancement | |||
|
|
견적을 받아 |
2,734
재고
|
STMicroelectronics | MOSFET N-Ch 20 V 0.025 Ohm 6 A STripFET V | 8 V | SMD/SMT | PowerFLAT-2x2-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 31 mOhms | 0.7 V | 6 nC | Enhancement | STripFET | ||
|
|
견적을 받아 |
737
재고
|
Infineon / IR | MOSFET MOSFT 30V 33A 31mOhm 29nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 19.3 nC | Enhancement | ||||
|
|
|
견적을 받아 |
167
재고
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 2 V to 4 V | 19.3 nC | Enhancement |
