- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
30 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
2,958
재고
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.4 mOhms | 2 V | 69 nC | Enhancement | |||
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견적을 받아 |
3,106
재고
|
Nexperia | MOSFET Std N-chanMOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.4 mOhms | ||||||
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견적을 받아 |
2,460
재고
|
ON Semiconductor | MOSFET DPAK 3W SMT PBF | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 40 V | 101 A | 4.4 mOhms | ||||||||||
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견적을 받아 |
2,844
재고
|
STMicroelectronics | MOSFET N-channel 80 V, 3.7 mOhm typ., 120 A STripFET F7 Power M... | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.4 mOhms | 4 V | 60 nC | Enhancement | ||||
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견적을 받아 |
2,503
재고
|
STMicroelectronics | MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 4.4 mOhms | ||||||
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견적을 받아 |
2,015
재고
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.4 mOhms | 2.2 V | 69 nC | Enhancement | |||
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견적을 받아 |
1,950
재고
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 37 nC | PowerTrench SyncFET | ||||
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|
견적을 받아 |
1,317
재고
|
Infineon / IR | MOSFET MOSFT 30V 21A 3.6mOhm 40nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | |||||||
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|
견적을 받아 |
115
재고
|
Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 40 A | 4.4 mOhms | 1.6 V | 11 nC | Enhancement | ||||
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견적을 받아 |
959
재고
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | 135 nC | OptiMOS | ||||
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|
|
견적을 받아 |
761
재고
|
Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.4 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | ||
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|
|
견적을 받아 |
557
재고
|
Infineon Technologies | MOSFET P-Ch -40V -80A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | OptiMOS | ||||||||
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|
|
견적을 받아 |
725
재고
|
Nexperia | MOSFET N-CHAN 55V 100A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 100 A | 4.4 mOhms | ||||||
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견적을 받아 |
122
재고
|
Infineon / IR | MOSFET MOSFT 20V 20A 4.4mOhm 22nC Qg | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 20 A | 4.4 mOhms | 2.45 V | 33 nC | |||||||
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견적을 받아 |
295
재고
|
Toshiba | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 58 A | 4.4 mOhms | 2 V to 4 V | 46 nC | Enhancement | ||||
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견적을 받아 |
241
재고
|
Texas Instruments | MOSFET 60-V N-Channel NexFET Power Mosfet | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.4 mOhms | 2.4 V | 49 nC | Enhancement | NexFET | ||
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|
|
견적을 받아 |
2,000
재고
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Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.4 mOhms | 2.3 V | 68 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
12,500
재고
|
Texas Instruments | MOSFET N-Ch NexFET Pwr MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 4.4 mOhms | 1.1 V | 6.2 nC | Enhancement | NexFET | ||
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전망 | Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.4 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
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전망 | Infineon Technologies | MOSFET P-Ch -40V -80A I2PAK-3 OptiMOS-P2 | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | OptiMOS | ||||||||||
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전망 | ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 4.4 mOhms | 1 V | 36 nC | Enhancement | ||||
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전망 | IXYS | MOSFET SMPD MOSFETs Power Device | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 235 A | 4.4 mOhms | 5 V | 715 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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전망 | Nexperia | MOSFET MOSFET N-CH 30V 30.4A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30.4 A | 4.4 mOhms | Enhancement | ||||||
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전망 | Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.4 mOhms | 2.3 V | 68 nC | Enhancement | OptiMOS | |||
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전망 | Shindengen | MOSFET 60V, 55A EETMOS POWER MOSFET | 20 V | Through Hole | TO-220-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 55 A | 4.4 mOhms | 3 V | 73 nC | Enhancement | |||||
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전망 | IXYS | MOSFET 280 Amps 85V 0.0044 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 85 V | 280 A | 4.4 mOhms | Enhancement | HyperFET | |||||
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전망 | Toshiba | MOSFET MOSFET N-CH 40V 18A | SOP-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 18 A | 4.4 mOhms | |||||||||||
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|
|
견적을 받아 |
209
재고
|
Infineon Technologies | MOSFET N-Ch 55V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 100 A | 4.4 mOhms | Enhancement | OptiMOS | ||||
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|
|
견적을 받아 |
124
재고
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 3.6mOhms 40nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | Enhancement | ||||
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|
견적을 받아 |
7
재고
|
Infineon Technologies | MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 4.4 mOhms | Enhancement | OptiMOS |
