- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
32 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
4,900
재고
|
Fairchild Semiconductor | MOSFET PT8 40/20V N-ch Dual Symmetric | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 23 mOhms | 1.8 V | 7.6 nC | PowerTrench | ||||
|
견적을 받아 |
4,122
재고
|
Fairchild Semiconductor | MOSFET -30V Dual | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 7 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
6,286
재고
|
Fairchild Semiconductor | MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
4,853
재고
|
Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
2,342
재고
|
Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | ||||||||
|
견적을 받아 |
2,663
재고
|
Fairchild Semiconductor | MOSFET 100V 7.5a .22 Ohms/VGS=1V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.5 A | 23 mOhms | Enhancement | UltraFET | |||||
|
견적을 받아 |
6,518
재고
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 20 A | 23 mOhms | 3.1 V | 8 nC | PowerTrench | ||||
|
견적을 받아 |
1,807
재고
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 23 mOhms | 3.1 V | 6.7 nC | PowerTrench | ||||
|
견적을 받아 |
1,901
재고
|
STMicroelectronics | MOSFET N-Ch 100 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 23 mOhms | Enhancement | ||||||
|
견적을 받아 |
7,528
재고
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 23 mOhms | PowerTrench | ||||||
|
견적을 받아 |
2,020
재고
|
Infineon Technologies | MOSFET MOSFT 55V 41A 17.5mOhm 42nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 41 A | 23 mOhms | 42 nC | ||||||||
|
견적을 받아 |
1,416
재고
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 37 A | 23 mOhms | 3.1 V | 7.6 nC | PowerTrench | ||||
|
견적을 받아 |
4,429
재고
|
ON Semiconductor | MOSFET 30V 7A N-Channel | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 23 mOhms | Enhancement | ||||||
|
견적을 받아 |
869
재고
|
STMicroelectronics | MOSFET N Ch 100V 0.019Ohm 80A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 23 mOhms | Enhancement | ||||||
|
견적을 받아 |
2,710
재고
|
Fairchild Semiconductor | MOSFET 30V N-Channel PwrTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
340
재고
|
Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 4 V | 130 nC | |||||
|
견적을 받아 |
1,230
재고
|
Infineon Technologies | MOSFET MOSFT 60V 48A 23mOhm 40nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | ||||||||
|
견적을 받아 |
296
재고
|
Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | ||||||||
|
견적을 받아 |
558
재고
|
Infineon Technologies | MOSFET MOSFT 60V 48A 23mOhm 40nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | ||||||||
|
견적을 받아 |
760
재고
|
Infineon / IR | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement | |||||
|
견적을 받아 |
70
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | |||||
|
견적을 받아 |
10
재고
|
IXYS | MOSFET Trench HiperFETs Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 23 mOhms | 5 V | 180 nC | Enhancement | HiPerFET | |||
|
견적을 받아 |
2,026
재고
|
Texas Instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 23 mOhms | 3 V | 7.2 nC | NexFET | ||||
|
견적을 받아 |
12,000
재고
|
Nexperia | MOSFET N-CHANNEL 100V STD LEVEL MOSFET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 23 mOhms | 4.6 V | 64 nC | Enhancement | ||||
|
견적을 받아 |
1,160
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | |||||
|
전망 | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 53 A | 23 mOhms | Enhancement | |||||||
|
전망 | Nexperia | MOSFET RAIL PWR-MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 53 A | 23 mOhms | Enhancement | |||||||
|
전망 | IXYS | MOSFET 75 Amps 150V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 23 mOhms | Enhancement | |||||||
|
전망 | IXYS | MOSFET 200V 90A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 90 A | 23 mOhms | Enhancement | HyperFET | ||||||
|
전망 | IXYS | MOSFET 100 Amps 200V 0.023 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 100 A | 23 mOhms | Enhancement | HyperFET |