- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
58 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
3,279
재고
|
Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
766
재고
|
STMicroelectronics | MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC | Enhancement | |||||
|
견적을 받아 |
1,854
재고
|
STMicroelectronics | MOSFET N-Ch 100V 0.0085 Ohm typ 40A STripFET VII | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 270 mOhms | 4 V | 44 nC | |||||
|
견적을 받아 |
1,535
재고
|
Diodes Incorporated | MOSFET Dual 30V P Chl HDMOS | 20 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2 A | 270 mOhms | Enhancement | ||||||
|
견적을 받아 |
868
재고
|
Fairchild Semiconductor | MOSFET N-CH/250V /16A/QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 15.6 A | 270 mOhms | Enhancement | QFET | |||||
|
견적을 받아 |
1,032
재고
|
Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 16 A | 270 mOhms | Enhancement | QFET | |||||
|
견적을 받아 |
983
재고
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
276
재고
|
IXYS | MOSFET 600V 26A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | |||||
|
견적을 받아 |
980
재고
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
4,526
재고
|
Infineon / IR | MOSFET MOSFT DUAL PCh -20V 1.7A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.7 A | 270 mOhms | 5.4 nC | Enhancement | |||||
|
견적을 받아 |
624
재고
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
450
재고
|
IXYS | MOSFET 500V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | Enhancement | HyperFET | |||||
|
견적을 받아 |
1,747
재고
|
Diodes Incorporated | MOSFET Dual 20V P Chl HDMOS | 12 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.7 A | 270 mOhms | Enhancement | ||||||
|
견적을 받아 |
5,598
재고
|
Infineon Technologies | MOSFET MOSFT DUAL PCh -30V 1.7A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.7 A | 270 mOhms | 7.5 nC | Enhancement | |||||
|
견적을 받아 |
5,119
재고
|
Infineon Technologies | MOSFET MOSFT P-Ch -30V -2.3A 165mOhm | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.3 A | 270 mOhms | 2 nC | ||||||||
|
견적을 받아 |
2,155
재고
|
Fairchild Semiconductor | MOSFET P-Ch PowerTrench Specified 1.8V | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 700 mA | 270 mOhms | Enhancement | PowerTrench | |||||
|
견적을 받아 |
644
재고
|
Fairchild Semiconductor | MOSFET 400V N-Ch QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 9.5 A | 270 mOhms | Enhancement | ||||||
|
견적을 받아 |
324
재고
|
STMicroelectronics | MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC | Enhancement | |||||
|
견적을 받아 |
179
재고
|
IXYS | MOSFET 22.0 Amps 500 V 0.27 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | Enhancement | ||||||
|
견적을 받아 |
330
재고
|
Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
150
재고
|
IXYS | MOSFET 22 Amps 500V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | 5.5 V | 50 nC | Enhancement | PolarHV | |||
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
241
재고
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | ||||
|
견적을 받아 |
30
재고
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A | 30 V | Through Hole | TO-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 140 nC | HyperFET | ||||||
|
견적을 받아 |
30
재고
|
IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV | |||
|
견적을 받아 |
48
재고
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 270 mOhms | Polar2 HiPerFET | ||||||
|
견적을 받아 |
19
재고
|
IXYS | MOSFET 32 Amps 800V 0.27 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | Enhancement | HyperFET | |||||
|
견적을 받아 |
10
재고
|
IXYS | MOSFET 29 Amps 800V 0.27 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 29 A | 270 mOhms | Enhancement | HyperFET | |||||
|
견적을 받아 |
2
재고
|
IXYS | MOSFET 32 Amps 800V 0.27 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 5 V | 150 nC | Enhancement | PolarHV, HiPerFET | |||
|
견적을 받아 |
1,000
재고
|
ROHM Semiconductor | MOSFET Nch 600V 15A Power MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15 A | 270 mOhms | 3 V | 42 nC | Enhancement |