- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
7,179
재고
|
Infineon / IR | MOSFET MOSFT DUAL NCh 30V 9.7A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC | |||||||
|
|
|
견적을 받아 |
1,971
재고
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 8.9A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 8.9 A | 21.6 mOhms | 2.5 V | 4.9 nC | ||||
|
|
|
견적을 받아 |
2,339
재고
|
Infineon / IR | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC | |||||||
|
|
견적을 받아 |
449
재고
|
Infineon Technologies | MOSFET N-Ch 55V 25A I2PAK-3 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 25 A | 21.6 mOhms | Enhancement | CoolMOS |
