- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Tradename :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,726
재고
|
STMicroelectronics | MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II | 25 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 5.6 A | 790 mOhms | 3 V | 14 nC | |||||
|
|
견적을 받아 |
767
재고
|
STMicroelectronics | MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 790 mOhms | |||||||||
|
|
|
견적을 받아 |
799
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 790 mOhms | 2 V | 10 nC | Enhancement | MDmesh | ||
|
|
견적을 받아 |
2
재고
|
IXYS | MOSFET -10.0 Amps -600V 0.790 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 10 A | 790 mOhms | - 4 V | 92 nC | Enhancement | PolarP | |||
|
|
|
전망 | STMicroelectronics | MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 5 A | 790 mOhms | ||||||||||
|
|
|
전망 | STMicroelectronics | MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 790 mOhms | 14 nC | Enhancement |
