4 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
3,122
재고
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | |||
|
견적을 받아 |
3,000
재고
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss TSOT26 | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | |||
|
견적을 받아 |
5,000
재고
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | |||
|
견적을 받아 |
4,500
재고
|
Diodes Incorporated | MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement |