- Vgs - Gate-Source Voltage :
- Package / Case :
5 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
83
재고
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
|
전망 | Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | ||||
|
전망 | Infineon Technologies | MOSFET LOW POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS |