- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
3,737
재고
|
Diodes Incorporated | MOSFET 20V Dual N-Ch ENH 20V 25mOhm 4.5V 5.8A | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 5.8 A, 5.8 A | 25 mOhms, 25 mOhms | 1.5 V | 10.4 nC | Enhancement | ||
|
|
견적을 받아 |
2,602
재고
|
Diodes Incorporated | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | +/- 10 V, +/- 10 V | SMD/SMT | U-DFN2030-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 25 mOhms, 25 mOhms | - 1.4 V, - 1.4 V | 21.4 nC, 21.4 nC | Enhancement | ||
|
|
견적을 받아 |
2,992
재고
|
ROHM Semiconductor | MOSFET 30V Nch+Nch Si MOSFET | 20 V, 20 V | SMD/SMT | TSMT-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 4.5 A, 4.5 A | 25 mOhms, 25 mOhms | 1 V, 1 V | 8.4 nC, 8.4 nC | Enhancement | |||
|
|
견적을 받아 |
3,000
재고
|
Diodes Incorporated | MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W | 10 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 6.9 A, 6.9 A | 25 mOhms, 25 mOhms | 1 V | 12.6 nC | Enhancement |
