- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
7 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
2,495
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | |||
|
|
견적을 받아 |
479
재고
|
IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | |||
|
|
견적을 받아 |
92
재고
|
IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | |||
|
|
견적을 받아 |
32
재고
|
IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | ||
|
|
견적을 받아 |
3,000
재고
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,000
재고
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | |||
|
|
견적을 받아 |
2,000
재고
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement |
