- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
2,902
재고
|
Diodes Incorporated | MOSFET Comp ENH Mode FET 12V Vdss 8V VGss | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | + 12 V, - 12 V | 5.6 A, - 3.8 A | 17 mOhms, 37 mOhms | 400 mV, - 1 V | 19.6 nC, 17.9 nC | Enhancement | ||
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견적을 받아 |
3,942
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 5.1 A, - 3.9 A | 17 mOhms, 37 mOhms | 400 mV, - 1 V | 23.1 nC, 20.8 nC | Enhancement |
