- Package / Case :
- Qg - Gate Charge :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
6,454
재고
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Diodes Incorporated | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W | 8 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 9.3 A | 41 mOhms | 0.53 V | 50.6 nC | Enhancement | ||
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견적을 받아 |
617
재고
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Diodes Incorporated | MOSFET 12V N-Ch Enh FET 2426pF 27.3nC | 4.5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 9.3 A | 41 mOhms | 0.53 V | 27.3 nC | Enhancement |
