- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
4,044
재고
|
Infineon / IR | MOSFET MOSFT 60V 12A 9.4mOhm 26nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 7.4 mOhms | 4.9 V | 26 nC | |||
|
견적을 받아 |
2,222
재고
|
Infineon / IR | MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 14.4 mOhms | 4.9 V | 28 nC | |||
|
견적을 받아 |
1,663
재고
|
Infineon Technologies | MOSFET MOSFT 150V 17A 95mOhm 13nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 17 A | 80 mOhms | 4.9 V | 13 nC | |||
|
견적을 받아 |
769
재고
|
Infineon Technologies | MOSFET Aud MOSFT 200V 18A 105mOhm 18nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 85 mOhms | 4.9 V | 29 nC | |||||
|
견적을 받아 |
72
재고
|
Infineon / IR | MOSFET MOSFT 150V 35A 35mOhm 39nC Qg | 20 V | SMD/SMT | DirectFET-MZ | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4.9 V | 39 nC |